Accelerated deep self-supervised ptycho-laminography for three-dimensional nanoscale imaging of integrated circuits, I. Kang, Y. Jiang, M. Holler, M. Guizar-Sicairos, A. F. J. Levi, J. Klug, S. Vogt, and G. Barbastathis, Optica 10, 1000-1008 (2023).
Wave packet tunneling and imaginary wave vector dispersion, W. Unglaub and A. F. J. Levi, Physics Open 17, 100164 (2023).
The Naked Chip: No trade secret or hardware trojan can hide from ptychographic X-ray laminography, A. F. J. Levi and G. Aeppli, IEEE Spectrum, 59, pp. 38-43 (2022).
Supersymmetry with scattering states, A. Abouzaid and A. F. J. Levi, Europhys. Lett. 135, 40002 (2021).
Supersymmetry with self-consistent Schrödinger-Poisson equations: finding partner potentials and breaking symmetry, A. Abouzaid and A. F. J. Levi, New J. Phys. 23, 063026 (2021).
From Specification to Silicon: Towards Analog/Mixed-Signal Design Automation using Surrogate NN Models with Transfer Learning, J. Liu, S. Su, M. Madhusudan, M. Hassanpourghadi, S. Saunders, Q. Zhang, R. Rasul, Y. Li, J. Hu, A. K. Sharma, S. S Sapatnekar, R. Harjani, A. F. J. Levi, S. Gupta, M. Chen, 2021 IEEE/ACM International Conference on Computer Aided Design (ICCAD) pp. 1-9 (2021).
Chip Scan: 3D x-ray imaging of CMOS circuits, M. Holler, M. Odstrcil, M. Guizar-Sicairos, M. Lebugle, E. Müller, S. Finizio, G. Tinti, C. David, O. Bunk, J. Raabe, G. Aeppli, J. Zusman, W. Unglaub, and A. F. J. Levi, GOMACTech, 29.2 (2020).
Three-dimensional imaging of integrated circuits with macro- to nanoscale zoom, M. Holler, M. Odstrcil, Manuel Guizar-Sicairos, M. Lebugle, E. Müller, S. Finizio, G. Tinti, C. David, J. Zusman, W. Unglaub, O. Bunk, J. Raabe, A. F. J. Levi and G. Aeppli, Nature Electronics 2, 464-470 (2019).
Behavioral regimes and long-lived emitter states in mesolasers, A. Abouzaid, W. Unglaub and A. F. J. Levi, J. Phys. B 52, 245401 (2019).
Quantum behavior in mesoscale lasers, A. F. J. Levi, IEEE PIERS (Rome) pp. 684-689 (2019).
Accelerated Wirtinger Flow: A fast algorithm for ptychography, R. Xu, M. Soltanolkotabi, J. P. Haldar, W. Unglaub, J. Zusman, A. F. J. Levi, R. M. Leahy, (2018).
Nanoscale x-ray imaging of circuit features without wafer etching, C. J. Junjing Deng, Y. P. Hong, S. Chen, Y. S. G. Nashed, T. Peterka, A. J. F. Levi, J. Damoulakis, S. Saha, T. Eiles and C. Jacobson, Phys. Rev. B 95, 104111 (2017).
Blind source separation of baseband RF communication signals using mixed-signal matrix multiplication circuit, B. Madhavan, E. Lee, J. Zusman and A. F. J. Levi (2016).
Coherent control of non-Markovian photon resonator dynamics, A. F. J. Levi, L. Campos Venuti, T. Albash and S. Haas, Phys. Rev. A 90, 022119 (2014).
Quantification and control of non-Markovian evolution in finite quantum systems via feedback, N. Chancellor, C. Petri, L. Campos Venuti, A. F. J. Levi and S. Haas, Phys. Rev. A 89, 052119 (2014).
Optimal design of a semiconductor heterostructure tunnel diode with nonlinear current-voltage characteristic, K. C. Magruder and A. F. J. Levi, Physica E 44, 1503-1509 (2012).
Gate tunable graphene-silicon Ohmic/Schottky contacts, C-C. Chen, C-C. Chang, Z. Li, A. F. J. Levi and S. B. Cronin, Appl. Phys. Lett. 101, 223113 (2012).
Ring resonator-based photonic microwave receiver modulator with picowatt sensitivity, M. Hossein-Zadeh and A. F. J. Levi, IET Optoelectron. 5, 36-39 (2011).
Optimal design of a semiconductor heterostructure tunnel diode with linear current-voltage characteristic, K. C. Magruder and A. F. J. Levi, Physica E 44, 322-326 (2011).
Graphene-silicon Schottky diodes, C. C. Chen, M. Aykol, C. C. Chang, A. F. J. Levi and S. B. Cronin, Nano Lett. 11, 1863-1867 (2011).
Quantum fluctuations and saturable absorption in mesoscale lasers, K. Roy-Choudhury and A. F. J. Levi, Phys. Rev. A 83, 043827 (1-9) (2011).
Quantum and semiclassical inelastic electron transport, K. C. Magruder and A. F. J. Levi, Phys. Rev. B 81, 235312 (1-7) (2010).
Quantum fluctuations in very small lasers, K. Roy-Choudhury and A. F. J. Levi, Phys. Rev. A 81, 013827 (1-11) (2010).
A novel formulation of the adjoint method in the design of quantum electronic devices, A. F. J. Levi and G. Rosen, SIAM J. Control Optim. 48, 3191-3223 (2010).
Plasmonic excitations in tight-binding nanostructures, Rodrigo A. Muniz, Stephan Haas, A. F. J. Levi and Ilya Grigorenko, Phys. Rev. B 80, 045413 (1-6) (2009).
Quantum fluctuations in small lasers, Kaushik Roy-Choudhury, Stephan Haas and A. F. J. Levi, Phys. Rev. Lett. 102, 053902 (1-4) (2009).
Electro-optic bistability in a LiNbO3 microdisk resonator, Mani Hossein-Zadeh and A. F. J. Levi, IET Optoelectronics 2, 111-114 (2008).
Optimal control of electromagnetic field using metallic nanoclusters, Ilya Grigorenko, Stephan Haas, Alexander Balatsky and A F J Levi, New J. Phys. 10, 043017 (2008).
Self-homodyne photonic microwave receiver architecture based on linear optical modulation and filtering, Mani Hossein-Zadeh and A. F. J. Levi, Microwave and Optical Technol. Lett. 50, 345-350 (2008).
Towards quantum engineering, A. F. J. Levi, Proceedings of the IEEE 96, 335-342 (2008).
Design of resonators using materials with negative refractive index, Petra Schmidt, Ilya Grigorenko and A. F. J. Levi, J. Opt. Soc. Am. B 24, 2791 (2007).
Optimization of aperiodic dielectric structures, Philip Seliger, Mohammad Mahvash, Chunming Wang and A. F. J. Levi, J. Appl. Phys. 100, 034310-(1-6) (2006).
Electromagnetic response of broken-symmetry nano-scale clusters, Ilya Grigorenko, Stephan Haas and A.F.J. Levi, Phys. Rev. Lett. 97, 036806 (1-4) (2006).
14.6 GHz LiNbO3 microdisk photonic self-homodyne RF receiver, Mani Hossein-Zadeh and A.F.J. Levi, IEEE MTT 54, 821-831 (2006).
Synthesis of electron transmission in nanoscale semiconductor devices, Petra Schmidt, Stephan Haas and A.F.J. Levi, Applied Physics Letters 88, 044508 (1-3) (2006).
Synthesis for device design, Jason Thalken, Stephan Haas and A.F.J. Levi, Journal of Applied Physics 98, 044508 (1-8) (2005).
Self-homodyne RF-optical LiNbO3 microdisk receiver, M. Hossein-Zadeh and A. F. J. Levi, Solid State Electron. 49, 1428-1434 (2005).
MAUI: Enabling Fiber-to-the-Processor with Parallel Multiwavelength Optical Interconnects, Brian E. Lemoff, Mohammed E. Ali, George Panotopoulos, Graham M. Flower, B. Madhavan, A.F.J. Levi and David W. Dolfi, Journal of Lightwave Technology 22, 2043-2054 (2004).
Adaptive design of excitonic absorption in broken-symmetry quantum wells, Jason Thalken, Weifei Li, Stephan Haas and A.F.J. Levi, Applied Physics Letters 85, 121-123 (2004).
Adaptive quantum design of atomic clusters, Jason Thalken, Yu Chen, A.F.J. Levi and Stephan Haas, Physical Review B 69, 195410 (2004).
Aperiodic nanophotonic design, Ioan L. Gheorma, Stephan Haas and A.F.J. Levi, Journal of Applied Physics 95, 1420-1426 (2004).
Adaptive design of nanoscale dielectric structures for photonics, Yu Chen, Ron Yu, Weifei Li, Omid Nohadani, Stephan Haas and A.F.J. Levi, Journal of Applied Physics 94, 6065-6069 (2003).
Accessing transmission-mode dispersion in super-prisms, Y.Du and A.F.J. Levi, Solid-State Electronics 47, 1369-1377 (2003).
Polarization-dependent reflectivity from dielectric nanowires, Y. Du, Song Han, Wu Jin, C. Zhou and A.F.J. Levi, Applied Physics Letters 83, 996-998 (2003).
Mb/s data transmission over a RF fiber-optic link using a LiNbO3 microdisk modulator, M. Hossein-Zadeh and A. F. J. Levi, Solid State Electron. 46, 2173-2178 (2002).
Dynamic behavior of scaled microdisk lasers, S.M.K. Thiyagarajan and A.F.J. Levi, Solid-State Electronics 45, 1821-1826 (2001).
High-speed response of optically-pumped InGaAs/InGaAsP microdisk lasers, S.M.K. Thiyagarajan and A.F.J. Levi, Electronics Letters 37, 175-176 (2001).
High-Q microphotonic electro-optic modulator,D.A.Cohen, M. Hossein-zadeh and A.F.J. Levi, Solid-State Electronics 45, 1577-1589 (2001).
Microphotonic modulator for microwave receiver, D.A.Cohen, M. Hossein-zadeh, and A.F.J. Levi, Electronics Letters 37, 300-302 (2001).
Microphotonic millimeter-wave receiver architecture, D.A.Cohen and A.F.J. Levi, Electronics Letters 37, 37-39 (2001).
Microphotonic components for a mm-wave receiver, D.A.Cohen and A.F.J. Levi, Solid-State Electronics 45, 495-505 (2001).
Analysis of hybrid opto-electronic WDM ADC”, P. Rabiei and A. F. J. Levi, IEEE J. Lightwave Technol. 18, 1264-1270 (2000).
Optical Interconnects in Systems, A.F.J. Levi, Proceedings of IEEE 88, 750-757 (2000).
Continuous room-temperature operation of microdisk laser diodes, S. M. K. Thiyagarajan, D. A. Cohen, A. F. J. Levi, S. Ryu , R. Li and P. D. Dapkus, Electronics Letters 35, 1252-1254 (1999).
A Gbyte/s Parallel Fiber-Optic Network Interface for Multimedia Applications, B. Raghavan, Y.-G. Kim, T.-Y. Chuang, B. Madhavan, and A. F. J. Levi, IEEE Network 13, 20-28 (1999).
Noise in voltage-biased scaled semiconductor laser diodes, S. M. K. Thiyagarajan and A. F. J. Levi, Solid State Electron. 43, 33-39 (1999).
Continuous room-temperature operation of optically pumped InGaAs/InGaAsP microdisk lasers, S. M. K. Thiyagarajan, A. F. J. Levi, C. K. Lin, I. Kim, P. D. Dapkus and S. J. Pearton, Electronics Lett. 34, 2333-2334 (1998).
A 55.0 Gb/s/cm data bandwidth density interface in 0.5 um CMOS for advanced parallel optical interconnects, B. Madhavan and A. F. J. Levi, Electron. Lett. 34, 1846-1847 (1998).
A multi-state external cavity laser diode, A. P. Kanjamala and A. F. J. Levi, Appl. Phys. Lett. 72, 2214-2216 (1998).
Signal quality in digitally modulated scaled laser diodes, S. M. K. Thiyagarajan and A. F. J. Levi, Solid State Electron. 42, 2027-2030 (1998).
Phased-array optically controlled receiver using serial feed, B. Tsap, Y. Chang, H. Fetterman, A. F. J. Levi, D. A. Cohen and I. Newberg, IEEE Photonics Technol. Lett. 10, 267-269 (1998).
Low-power 2.5 Gbps VCSEL driver in 0.5 um CMOS technology, B. Madhavan and A. F. J. Levi, Electron. Lett. 34, 178-179 (1998).
Wavelength selective electro-optic flip-flop, A. P. Kanjamala and A. F. J. Levi, Electron. Lett. 34, 299-300 (1998).
Wavelength switching in multi-cavity laser diodes, S. M. K. Thiyagarajan, A. P. Kanjamala and A. F. J. Levi, J. Appl. Phys. 84, 1805-1812 (1998).
Wavelength selection for Gb/s data transmission using out-of-band RF modulation, A. P. Kanjamala and A. F. J. Levi, IEEE Photonics Technol. Lett. 9, 1265-1267 (1997).
Wavelength switching in multi-cavity lasers, A. P. Kanjamala and A. F. J. Levi, Appl. Phys. Lett. 71, 300-302 (1997).
Improving end system performance for multimedia applications over high bandwidth networks, S. Zeadally, G. Gheorghiu and A. F. J. Levi, Multimedia Tools and Applications 5, 307-322 (1997).
Optically-controlled serially-fed phased array transmitter, Y. Chang, B. Tsap, H. Fetterman, D. A. Cohen, A. F. J. Levi and I. Newberg, IEEE Microwave and Guided Wave Lett. 7, 69-71 (1997).
8 Gbps CMOS interface for parallel fiber-optic links, B. Sano, B. Madhavan and A. F. J. Levi, Electron. Lett. 32, 2262-2263 (1996).
Wavelength switching using multicavity semiconductor laser diodes, A. P. Kanjamala and A. F. J. Levi, Electron. Lett. 32, 2100-2102 (1996).
The effect of scaling microlasers on modal noise, S. M. K. Thiyagarajan and A. F. J. Levi, Appl. Phys. Lett. 69, 3459-3461 (1996).
Transient response of wavelength switching in multi-cavity mode-locked laser diodes, A. P. Kanjamala and A. F. J. Levi, Appl. Phys. Lett. 69, 3647-3649 (1996).
Optically-controlled serially-fed phased array sensor, D. Cohen, Y. Chang, A. F. J. Levi, H. Fetterman and I. Newberg, IEEE Photonics Technol. Lett. 8, 1683-1685 (1996).
12×622 Mb/s optical receiver Array module for parallel digital datalinks, S. Siala, Y. Dekovic, M. Govindarajan, V. Ramakishnan, R. Kinter, J. Padilla, R. N. Nottenburg, and A. F. J. Levi, IEEE-Transactions Components, Packaging, and Manufacturing Technology. Part B: Advanced Packaging 19, 548-553 (1996).
The spectrum of microdisk lasers, N. C. Frateschi and A. F. J. Levi, J. Appl. Phys. 80, 644-653 (1996).
Sub-picosecond skew in multimode fiber ribbon for synchronous data transmission, A. P. Kanjamala and A. F. J. Levi, Electron Lett. 31, 1376-1377 (1995).
Resonant modes and laser spectrum of microdisk lasers, N. C. Frateschi and A. F. J. Levi, Appl. Phys. Lett. 66, 2932-2934 (1995).
Transferred-electron induced current instabilities in heterojunction bipolar transistors, V. A. Posse, B. Jalali and A. F. J. Levi, Appl. Phys. Lett. 66, 3319-3321 (1995).
Polarization of lasing emission in microdisk laser diodes, N. C. Frateschi, A. P. Kanjamala, A. F. J. Levi and T. Tanbun-Ek, Appl. Phys. Lett. 66, 1859-1861 (1995).
Low skew multimode ribbon fibers for parallel optical communication, S. Siala, A. P. Kanjamala, R. N. Nottenburg and A. F. J. Levi, Electron. Lett. 30, 1784-1786 (1994).
InGaAs/GaAs quantum well lasers with dry-etched mirrors passivated by vacuum atomic layer epitaxy, N. C. Frateschi, M. Y. Jow, P. D. Dapkus and A. F. J. Levi, Appl. Phys. Lett. 65, 1748-1750 (1994).
A system design perspective on optical interconnection technology, R. A. Nordin and A. F. J. Levi, AT&T Technical Journal 72, (number 5) 37-49 (1993).
Semiconductor microlasers, A. F. J. Levi, Physics World 6, no. 10, 32-35 (1993).
Si-based receivers for optical data links, B. Jalali, L. Naval and A. F. J. Levi, J. Lightwave Technol. 12, 930-935 (1994).
Microdisk lasers, A. F. J. Levi, Solid State Electronics 37, 1297-1302 (1994).
Comparison of graded and abrupt junction InGaAs heterojunction bipolar transistors, J. A. Baquedano, A. F. J. Levi and B. Jalali, Appl. Phys. Lett. 64, 67-69 (1994).
Threshold characteristics of semiconductor microdisk lasers, R. E. Slusher, A. F. J. Levi, U. Mohideen, S. L. McCall, S J. Pearton and R. A. Logan, Appl. Phys. Lett. 63, 1310-1312 (1993).
Room temperature operation of submicrometre radius disc laser, A. F. J. Levi, S. L. McCall, S. J. Pearton and R. A. Logan, Electron. Lett. 29, 1666-1667 (1993).
High performance optical data link array technology, R. A. Nordin, D. B. Buchholz, R. F. Huisman, N. R. Basavanhally and A. F. J. Levi, IEEE-Transactions Components, Packaging, and Manufacturing Technology 16, 783-788 (1993).
Forward delay in scaled AlInAs/InGaAs heterojunction bipolar transistors, J. A. Baquedano, A. F. J. Levi, B. Jalali and A. Y. Cho, Appl. Phys. Lett. 63, 2261-2263 (1993).
Direct observation of electron spectral function in the integer and fractional quantum hall regimes, G. S. Boebinger, A. F. J. Levi, A. Passner, L. N. Pfeiffer and K. W. West, Phys. Rev. B 47, 16608-16611 (1993).
Amplified spontaneous emission and carrier pinning in laser diodes, S. L. Chuang, J. O’Gorman, and A. F. J. Levi, IEEE J. Quantum Electron. 29, 1631-1639 (1993).
Room temperature lasing action in InGaP/InGaAs microcylinder laser diodes, A. F. J. Levi, R. E. Slusher, S. L. McCall, S. J. Pearton and W. S. Hobson, Appl. Phys. Lett. 62, 2021-2023 (1993).
Effect of fixed emission wavelength on threshold current of InGaAsP semiconductor laser diodes, J. O’Gorman and A. F. J. Levi, Electron. Lett. 28, 2091-2093 (1992).
Carrier pinning by mode fluctuations in laser diodes, J. O’Gorman, S. L. Chuang and A. F. J. Levi, Appl. Phys. Lett. 62, 1454-1456 (1993).
Wavelength dependence of To in InGaAsP semiconductor laser diodes, J. O’Gorman and A. F. J. Levi, Appl. Phys. Lett. 62, 2009-2011 (1993).
Forward transit delay in InGaAs heterojunction bipolar transistors with nonequilibrium electron transport, J. Laskar, R. N. Nottenburg, J. A. Baquedano, A. F. J. Levi and J. Kolodzey, IEEE Trans. Elect. Device. 40, 1942-1949 (1993).
Directional light coupling from microdisk lasers, A. F. J. Levi, R. E. Slusher, S. L. McCall, J. L. Glass, S. J. Pearton, and R. A. Logan, Appl. Phys. Lett. 62, 561-563 (1993).
Cavity formation in semiconductor lasers, J. O’Gorman, A. F. J. Levi, D. Coblentz, T. Tanbun-Ek and R. A. Logan, Appl. Phys. Lett. 61, 889-891 (1992).
Room temperature operation of microdisc lasers with submilliamp threshold current, A. F. J. Levi, R. E. Slusher, S. L. McCall, T. Tanbun-Ek, D. L. Coblentz and S. J. Pearton, Electron. Lett. 28, 1010-1012 (1992).
High-speed coplanar transmission lines, U. D. Keil, D. R. Dykaar, A. F. J. Levi, R. F. Kopf, L. N. Pfeiffer, S. B. Darack and K. W. West, IEEE J. Quantum Electronics 28, 2333-2342 (1992).
SiGe photo-detectors grown by rapid thermal chemical vapor deposition, B. Jalali, A. F. J. Levi, F. Ross and E. A. Fitzgerald, Electron. Lett. 28, 269-271 (1992).
The temperature dependence of long wavelength semiconductor lasers, J. O’Gorman, A. F. J. Levi, T. Tanbun-Ek and R. A. Logan, Appl. Phys. Lett. 60, 1058-1060 (1992).
Vertical scaling in heterostructure bipolar transistors with nonequilibrium electron transport, A. F. J. Levi, B. Jalali, R. N. Nottenburg and A. Y. Cho, Appl. Phys. Lett. 60, 460-462 (1992).
Whispering-gallery mode microdisk lasers, S. L. McCall, A. F. J. Levi, R. E. Slusher, S. J. Pearton and R. A. Logan, Appl. Phys. Lett. 60, 289-291 (1992).
On the temperature sensitivity of semiconductor lasers, J. O’Gorman, A. F. J. Levi, S. Schmitt-Rink, T. Tanbun-Ek, D. L. Coblentz and R. A. Logan, Appl. Phys. Lett. 60, 157-159 (1992).
Optical rectification at semiconductor surfaces, S. L. Chuang, S. Schmitt-Rink, B. I. Greene, P. N. Saeta and A. F. J. Levi, Phys. Rev. Lett. 68, 102-105 (1992).
Digital transmission with intracavity loss modulated quantum well distributed feedback lasers, P. A. Andrekson, J. O’Gorman, A. F. J. Levi, M. Haner, N. A. Olsson, T. Tanbun-Ek, D. L. Coblentz and R. A. Logan, IEEE Trans. Photonics Technol. Lett. 3, 1150-1152 (1991).
Excitation mechanisms and optical properties of rare-earth ions in semiconductors, S. Schmitt-Rink, C. M. Varma and A. F. J. Levi, Phys. Rev. Lett. 66, 2782-2785 (1991).
Dynamic spectral broadening in digitally modulated lasers, J. O’Gorman, A. F. J. Levi, T. Tanbun-Ek, D. L. Coblentz and R. A. Logan, Electron. Lett. 27, 1239-1241 (1991).
Saturable absorption in intracavity loss modulated quantum well lasers, J. O’Gorman, A. F. J. Levi, T. Tanbun-Ek and R. A. Logan, Appl. Phys. Lett. 59, 16-18 (1991).
Nonlinear spectroscopy near-half gap in bulk and quantum well GaAs/AlGaAs waveguides, M. N. Islam, C. E. Soccolich, R. E. Slusher, A. F. J. Levi, W. S. Hobson and G. Young, J. Appl. Phys. 71, 1927-1935 (1992).
Large nonlinear phase shifts in low-loss AlGaAs waveguides near half gap, S. T. Ho, C. E. Soccolich, W. S. Hobson, A. F. J. Levi, M. N. Islam and R. E. Slusher, Appl. Phys. Lett. 59, 2558-2560 (1991).
All-optical timing restoration using a hybrid time domain chirp switch, M. N. Islam, C. E. Soccolich, S. T. Ho, R. E. Slusher, W. S. Hobson and A. F. J. Levi, Optics Lett. 16, 1116-1118 (1991).
Log-periodic antennas for pulsed terahertz radiation, D. R. Dykaar, B. I. Greene, J. F. Federici, A. F. J. Levi, L. Pfeiffer and R. Kopf, Appl. Phys. Lett. 59, 262-264 (1991).
Schottky barrier inhomogeneity at epitaxial NiSi2 interfaces on Si(100), R. T. Tung, A. F. J. Levi, J. P. Sullivan and F. Schrey, Phys. Rev. Lett. 66, 72-75 (1991).
Ordered monolayer structures of boron in Si(111) and Si(100), R. L. Headrick, B. E. Weir, A. F. J. Levi, B. Freer, J. Bevk and L. C. Feldman, J. Vac. Sci. Technol. A9, 2269-2272 (1991).
Buried, ordered structures: Boron in Si(111) and Si(100), R. L. Headrick, B. E. Weir, A. F. J. Levi, D. J. Eaglesham and L. C. Feldman, J. Crystal Growth 111, 838-842 (1991).
High power switching of multielectrode broad area lasers, J. O’Gorman, A. F. J. Levi and W. S. Hobson, Electron. Lett. 27, 13-15 (1991).
Low threshold GaAs/AlGaAs quantum well lasers grown by organometallic vapor phase epitaxy using trimethylamine alane, W. S. Hobson, J. P. van der Zeil, A. F. J. Levi, J. O’Gorman, C. R. Abernathy, M. Geva, L. C. Luther and V. Swaminathan, J. Appl. Phys. 70, 432-435 (1991).
GRINSCH GaAs/AlGaAs laser structures grown by OMVPE using a novel aluminum source, W. S. Hobson, A. F. J. Levi, J. O’Gorman, S. J. Pearton, C. R. Abernathy and V. Swaminathan, Electron. Lett. 26, 1762-1764 (1990).
Calculated chirp in intracavity loss modulated DFB lasers, J. O’Gorman and A. F. J. Levi, Electron. Lett. 26, 1784-1787 (1990).
Asymmetric line broadening in intracavity loss modulated quantum well distributed feedback lasers, J. O’Gorman, A. F. J. Levi, T. Tanbun-Ek and R. A. Logan, Appl. Phys. Lett. 58, 669-671 (1991).
A systems perspective on digital interconnection technology, R. A. Nordin, A. F. J. Levi, R. N. Nottenburg, J. O’Gorman, T. Tanbun-Ek and R. A. Logan, J. Lightwave Technol. 10, 811-827 (1992).
High index contrast mirrors for optical microcavities, Seng-Tiong Ho, S. L. McCall, R. E. Slusher, L. N. Pfeiffer, K. W. West, A. F. J. Levi, G. E. Blonder and J. Jewell, Appl. Phys. Lett. 57, 1387-1389 (1990).
Dynamic and static response of multielectrode lasers, J. O’Gorman, A. F. J. Levi, R. N. Nottenburg, T. Tanbun-Ek and R. A. Logan, Appl. Phys. Lett. 57, 968-970 (1990).
Dynamic optoelectronic read/write memory, R. N. Nottenburg, A. F. J. Levi, T. Tanbun-Ek and R. A. Logan, Appl. Phys. Lett. 56, 1501-1503 (1990).
Direct observation of two-dimensional magnetopolarons in a resonant tunnel junction, G. S. Boebinger, A. F. J. Levi, S. Schmitt-Rink, A. Passner, L. N. Pfeiffer and K. W. West, Phys. Rev. Lett. 65, 235-238 (1990).
The Si(100)-(2X1) boron reconstruction: Self-limiting monolayer doping, R. L. Headrick, B. E. Weir, A. F. J. Levi, D. J. Eaglesham and L. C. Feldman, Appl. Phys. Lett. 57, 2779-2781 (1990).
Electrical conduction in the Si(111):B-R30/a-Si interface reconstruction, R. L. Headrick, A. F. J. Levi, H. S. Luftman, J. Kovalchick and L. C. Feldman, Phys. Rev. B 43, 14711-14714 (1991).
Ultrafast coplanar air-transmission lines, D. R. Dykaar, A. F. J. Levi and M. Anzlowar, Appl. Phys. Lett. 57, 1123-1125 (1990).
Picosecond pump and probe spectroscopy utilizing freely propagating terahertz radiation, B. I. Greene, J. F. Federici, D. R. Dykaar, A. F. Levi and L. Pfeiffer, Optics Lett. 16, 48-49 (1991).
Large signal picosecond response of InGaAs/InP quantum well lasers with an intracavity loss modulator, D. R. Dykaar, K. Berthold, A. F. J. Levi, T. Tanbun-Ek and R. A. Logan, Appl. Phys. Lett. 56, 1629-1631 (1990).
Base doping limits in heterostructure bipolar transistors, B. Jalali, R. N. Nottenburg, A. F. J. Levi, R. A. Hamm, M. B. Panish, D. Sivco and A. Y. Cho, Appl. Phys. Lett. 56, 1460-1462 (1990).
Nonequilibrium electron transport in heterostructure bipolar transistors probed by magnetic field, R. N. Nottenburg, A. F. J. Levi, B. Jalali, D. Sivco, D. A. Humphrey and A. Y. Cho, Appl. Phys. Lett. 56, 2660-2662 (1990).
Multielectrode quantum well laser for digital switching, A. F. J. Levi, R. N. Nottenburg, R. A. Nordin, T. Tanbun-Ek and R. A. Logan, Appl. Phys. Lett. 56, 1095-1097 (1990).
Nonequilibrium electron transport in bipolar devices, A. F. J. Levi, R. N. Nottenburg, Y. K. Chen and M. B. Panish, Physics Today, 43, 58-64 (1990).
Wavelength switching in InGaAs/InP quantum well lasers, K. Berthold, A. F. J. Levi, T. Tanbun-Ek and R. A. Logan, Appl. Phys. Lett. 56, 122-124 (1990).
Very low threshold InGaAs/InGaAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxy, T. Tanbun-Ek, R. A. Logan, H. Temkin, K. Berthold, A. F. J. Levi and S. N. G. Chu, Appl. Phys. Lett. 55, 2283-2285 (1989).
Voltage controlled Q-switching of InGaAs/InP single quantum well lasers, K. Berthold, A. F. J. Levi, T. Tanbun-Ek, R. A. Logan and G. Chu, Appl. Phys. Lett. 55, 1940-1942 (1989).
Bias controlled intersubband wavelength switching in a GaAs/AlGaAs quantum well laser, K. Berthold, A. F. J. Levi, S. J. Pearton, R. J. Malik, W. Y. Jan and J. E. Cunningham, Appl. Phys. Lett. 55, 1382-1384 (1989).
Nonequilibrium Electron Dynamics in Bipolar Transistors, A. F. J. Levi, R. N. Nottenburg, Y. K. Chen, P. H. Beton and M. B. Panish, Solid State Electronics 32, 1289-1295 (1989).
Submicrometer AlGaAs/GaAs heterostructure bipolar transistor with high gain, M. Anzlowar, D. A. Humphrey, D. Sivco, A. Y. Cho, R. N. Nottenburg and A. F. J. Levi, Electron. Lett. 25, 1529-1530 (1989).
High frequency study of nonequilibrium transport in heterostructure bipolar transistors, Y. K. Chen, A. F. J. Levi, R. N. Nottenberg, P. H. Beton and M. B. Panish, Appl. Phys. Lett. 55, 1789-1791 (1989).
Temperature and Field Dependence of the Magnetic Penetration Length of C-Axis Oriented YBaCuO Films, P. L. Gammel, A. F. Hebard, C. E. Rice and A. F. J. Levi, Physica C 162-164, 1565-1566 (1989).
Ion beam thinning and polishing of YBaCuO films, A. F. Hebard, R. M. Fleming, K. L. Short, A. E. White, C. E. Rice, A. F. J. Levi, and R. H. Eick, Appl. Phys. Lett. 55, 1915-1917 (1989).
Electron transport in an AlSb/InAs/GaSb tunnel emitter hot electron transistor, T. H. Chiu and A. F. J. Levi, Appl. Phys. Lett. 55, 1891-1893 (1989).
Near-ideal Lateral Scaling in Abrupt AlInAs/InGaAs Heterostructure Bipolar Transistors Prepared by Molecular Beam Epitaxy, B. Jalali, R. N. Nottenburg, Y. K. Chen, A. F. J. Levi, A. Y. Cho and D. Sivco, Appl. Phys. Lett. 54, 2333-2335 (1989).
Numerical Study of Nonequilibrium Electron Transport in AlGaAs/GaAs Heterojunction Bipolar Transistors, P. H. Beton and A. F. J. Levi, Appl. Phys. Lett. 55, 250-252 (1989).
AlAs/GaAs Tunnel Emitter Bipolar Transistor, A. F. J. Levi, R. N. Nottenburg, Y. K. Chen, and J. E. Cunningham, Appl. Phys. Lett. 54, 2250-2252 (1989).
A Pairbreaking Description of the Superconducting-Normal Phase Boundary in YBaCuO Thin Films; The Type II-Clean Limit, A. F. Hebard, P. L. Gammel, C. E. Rice, and A. F. J. Levi, Phys. Rev. B40, 5243-5246 (1989).
Tunneling in the Presence of Phonons: A Solvable Model, B. Y. Gelfand, S. Schmitt-Rink and A. F. J. Levi, Phys. Rev. Lett. 62, 1683-1686 (1989).
High Field Transport in GaAs Transistors, K. Berthold, A. F. J. Levi, J. Walker and R. J. Malik, Appl. Phys. Lett. 54, 813-819 (1989).
Non-Random Doping and Elastic Scattering of Carriers in Semiconductors, A. F. J. Levi, S. L. McCall and P. M. Platzman, Appl. Phys. Lett. 54, 940-942 (1989).
Scaling “Ballistic” Heterojunction Bipolar Transistors, A. F. J. Levi, Electron. Lett. 24, 1273-1275 (1988).
Quantum Reflections and Inelastic Scattering of Electrons in Semiconductor Heterojunctions, J. F. Müller, A. F. J. Levi and S. Schmitt-Rink, Phys. Rev. B 38, 9843-9849 (1988).
Extreme Nonequilibrium Electron Transport in Heterojunction Bipolar Transistors, K. Berthold, A. F. J. Levi, J. Walker and R. J. Malik, Appl. Phys. Lett. 52, 2247-2249 (1988).
GaInAs/GaInAsP/InP Heterostructure Bipolar Transistors with Very Thin Base (150Å) Grown by Chemical Beam Epitaxy, W. T. Tsang, A. F. J. Levi and E. G. Burkhardt, Appl. Phys. Lett. 53, 983-985 (1988).
Ion-Beam-Induced Metal-Insulator Transition in YBaCuO: A Mobility Edge?, J. M. Valles, Jr., A. E. White, K. T. Short, R. C. Dynes, J. P. Garno, A. F. J. Levi, M. Anzlowar and K. Baldwin. Phys. Rev. B 39, 11599-11602 (1989).
Electrical Response of Superconducting YBaCuO to Light, W. S. Brocklesby, D. Monroe, A. F. J. Levi, M. Hong, S. H. Liou, J. Kwo, C. E. Rice, P. M. Mankiewich and R. E. Howard, Appl. Phys. Lett. 54, 1175-1177 (1988).
Controllable Reduction of critical currents in YBaCuO films, A. E. White, K. T. Short, R. C. Dynes, A. F. J. Levi, M. Anzlowar, K. Baldwin, P. A. Polakos, T. A. Fulton, and L. N. Dunkleberger, Appl. Phys. Lett. 53, 1010-1012 (1988).
Implantation, Damage, and Regrowth of High Tc Superconductors, A. E. White, K. T. Short, J. P. Garno, R. C. Dynes, L. F. Schneemeyer, J. Waszczak, A. F. J. Levi, M. Anzlowar, and K. W. Baldwin, Nucl. Instr. Methods in Phys. Research B 37/38, 923-929 (1989).
Normal State Transport Parameters of Epitaxial Thin Films of YBaCuO , H. L. Störmer, A. F. J. Levi, K. W. Baldwin, M. Anzlowar, and G. Boebinger, Phys. Rev. B 38, 2472-2476 (1988).
Epitaxial Order and Resistivity of High Temperature Superconductors grown on SrTiO , A. F. J. Levi, J. M. Vandenberg, C. E. Rice, A. P. Ramirez, K. W. Baldwin, M. Anzlowar, A. E. White and K. Short, J. Crystal Growth. 91, 386-391 (1988).
Preparation of Superconducting Thin Films of Calcium Strontium Bismuth Copper Oxides by Coevaporation, C. E. Rice, A. F. J. Levi, R. M. Fleming, P. Marsh, K. W. Baldwin, M. Anzlowar, A. E. White, K. T. Short, S. Nakahara and H. L. Störmer, Appl. Phys. Lett. 52, 1828-1830 (1988).
Ion-Beam-Induced Destruction of Superconducting Phase Coherence in YBaCuO , Alice E. White, K. T. Short, D. C. Jacobson, J. M. Poate, R. C. Dynes, P. M. Mankiewich, W. J. Skocpol, R. E. Howard, M. Anzlowar, K. W. Baldwin, A. F. J. Levi, J. R. Kwo, T. Hsieh and M. Hong, Phys. Rev. B 37, 3755-3758 (1988).
“Coreless Defects” and Continuity of Epitaxial NiSi2/Si(100) Thin Films, J. L. Batstone, J. M. Gibson, R. T. Tung and A. F. J. Levi, Appl. Phys. Lett. 52, 828-830 (1988).
Origin of the Excess Capacitance at Intimate Schottky Contacts, J. Werner, A. F. J. Levi, R. T. Tung, M. Anzlowar and M. R. Pinto, Phys. Rev. Lett. 60, 53-56 (1988).
Epitaxial Yttrium Silicide on (111) Silicon by Vacuum Annealing, M. Gurvitch, A. F. J. Levi, R. T. Tung and S. Nakahara, Appl. Phys. Lett. 51, 311-313 (1987).
Electron Transport of (Al, Ga)Sb/InAs Heterojunctions Prepared by Molecular Beam Epitaxy, T. H. Chiu, W. T. Tsang and A. F. J. Levi, Electron. Lett. 23, 917-919 (1987).
Hot Electron Transport in the AlSb/InAs/GaSb Double Heterostructure Prepared by Molecular Beam Epitaxy, T. H. Chiu and A. F. J. Levi, J. Vac. Sci. Technol. B6, 674-675 (1988).
Electron Beam Source Molecular Beam Epitaxial Growth of Analog Graded AlGaAs Ballistic Transistors, R. J. Malik and A. F. J. Levi, Appl. Phys. Lett. 52, 651-653 (1988).
Inelastic Scattering of Electrons Traversing Semiconductor Heterojunctions, J. Müller, S. Schmitt-Rink and A. F. J. Levi, Appl. Phys. Lett. 52, 236-238 (1987).
Unipolar Hot Electron Transistors, A. F. J. Levi and T. H. Chiu, Physica Scripta T23, 227-231 (1988).
Room Temperature Operation of Unipolar Hot Electron Transistors, A. F. J. Levi and T. H. Chiu, Solid State Electronics 31, 625-628 (1988).
Electron Transport Dynamics in Quantized Intrinsic GaAs, A. F. J. Levi, R. J. Späh and J. H. English, Phys. Rev. B 36, 9402-9405 (1987).
Room Temperature Operation of Hot Electron Transistors, A. F. J. Levi and T. H. Chiu, Appl. Phys. Lett. 51, 984-986 (1987).
Nonequilibrium Electron Transport in Bipolar Devices, A. F. J. Levi and Y. Yafet, Appl. Phys. Lett. 51, 42-44 (1987).
Electroluminescence from the Base of a GaAs/AlGaAs Double Heterojunction Bipolar Transistor, A. F. J. Levi, J. R. Hayes, A. C. Gossard and J. H. English, Appl. Phys. Lett. 50, 98-100 (1987).
A New Technique for the Growth of Compositionally Graded Layers by OMCVD for Novel Device Structures, R. Bhat, M. A. Koza, J. R. Hayes and A. F. J. Levi, J. of Crystal Growth 77, 293-296 (1986).
Epitaxial Metal-Semiconductor Structures and their Properties, R. T. Tung, A. F. J. Levi and J. M. Gibson, J. Vac. Sci. Technol. B 4, 1435-1443 (1986).
States at Epitaxial NiSi2/Si Heterostructures studied by DLTS and Hydrogenation, A. Chantre, A. F. J. Levi, R. T. Tung, W. C. Dautremont-Smith and M. Anzlowar, Phys. Rev. B 34, 4415-4418 (1986).
Base Transport Dynamics in a Heterojunction Bipolar Transistor, J. R. Hayes, A. F. J. Levi, A. C. Gossard and J. H. English, Appl. Phys. Lett. 49, 1481-1483 (1986).
Dynamics of Injected Electron Cooling in GaAs, J. R. Hayes, A. F. J. Levi and W. Wiegmann, Appl. Phys. Lett. 48, 1365-1367 (1986).
Dynamics of Extreme Nonequilibrium Electron Transport, J. R. Hayes and A. F. J. Levi, IEEE J. Quantum Electron. 22, 1744-1752 (1986).
Ballistic Injection Devices, A. F. J. Levi, J. R. Hayes and R. Bhat, Appl. Phys. Lett. 48, 1609-1611 (1986).
The Schottky Barrier Heights of single crystal NiSi2 on Si(111): The Effect of a surface P-N Junction, R. T. Tung, K. K. Ng, J. M. Gibson and A. F. J. Levi, Phys. Rev. B 33, 7077-7090 (1986).
Growth of Strained Layer Semiconductor/Metal/Semiconductor Heterostructures, R. T. Tung, J. M. Gibson and A. F. J. Levi, Appl. Phys. Lett. 48, 1264-1266 (1986).
Control of a Natural Permeableng CoSi2 base transistor, A. F. J. Levi and J. M. Gibson, Appl. Phys. Lett. 48, 635-637 (1986).
Transistor Action in Si/CoSi2/Si Heterostructures, J. C. Hensel, A. F. J. Levi, R. T. Tung and J. M. Gibson, Appl. Phys. Lett. 47, 151-153 (1985).
Magnetic Field Dependence of Hot Electron Transport in GaAs, J. R. Hayes, A. F. J. Levi and W. Wiegmann, Appl. Phys. Lett. 47, 964-966 (1985).
Hot Electron Spectroscopy of GaAs, A. F. J. Levi, J. R. Hayes, P. M. Platzman and W. Wiegmann, Physica 134 B, 480-486 (1985).
Hot Electron Spectroscopy of GaAs, J. R. Hayes, A. F. J. Levi and W. Wiegmann, Phys. Rev. Lett. 54, 1570-1572 (1985).
Injected Hot Electron Transport in GaAs, A. F. J. Levi, J. R. Hayes, P. M. Platzman and W. Wiegmann, Phys. Rev. Lett. 55, 2071-2073 (1985).
Hot Electron Spectroscopy, J. R. Hayes, A. F. J. Levi and W. Wiegmann, Electron. Lett. 20, 851-852 (1984).
Phonon Structure of Amorphous Germanium by Inelastic Electron Tunnelling Spectroscopy, M. C. Payne, A. F. J. Levi, W. A. Phillips, J. C. Inkson and C. J. Adkins, J. Phys. C 17, 1643-1653 (1984).
Phonon Structure of Amorphous SiOx by Inelastic Tunnelling Spectroscopy, A. F. J. Levi, W. A. Phillips and C. J. Adkins, Solid State Comm. 45, 43-45 (1983).