Advanced Electronic and Photonic Technology


Electrical Engineering Department
University of Southern California

Publications: Papers

 

Coherent control of non-Markovian photon resonator dynamics, A. F. J. Levi, L. Campos Venuti, T. Albash, and S. Haas, Phys. Rev. A 90, 022119 (2014)

Quantification and control of non-Markovian evolution in finite quantum systems via feedback, N. Chancellor, C. Petri, L. Campos Venuti, A. F. J. Levi, and S. Haas, Phys. Rev. A 89, 052119 (2014)

Optimal design of a semiconductor heterostructure tunnel diode with nonlinear current-voltage characteristic, K. C. Magruder and A. F. J. Levi, Physica E 44, 1503-1509 (2012)

Ring resonator-based photonic microwave receiver modulator with picowatt sensitivity, M. Hossein-Zadeh and A. F. J. Levi, IET Optoelectron. 5, 36-39 (2011)

Optimal design of a semiconductor heterostructure tunnel diode with linear current-voltage characteristic, K. C. Magruder and A. F. J. Levi, Physica E 44, 322-326 (2011)

Graphene-silicon Schottky diodes, C. C. Chen, M. Aykol, C. C. Chang, A. F. J. Levi, S. B. Cronin, Nano Lett. 11, 1863-1867 (2011)

Quantum fluctuations and saturable absorption in mesoscale lasers, K. Roy-Choudhury and A. F. J. Levi, Phys. Rev. A 83, 043827 (1-9) (2011)

Quantum and semiclassical inelastic electron transport, K. C. Magruder and A. F. J. Levi, Phys. Rev. B 81, 235312 (1-7) (2010)

Quantum fluctuations in very small lasers, K. Roy-Choudhury and A. F. J. Levi, Phys. Rev. A 81, 013827 (1-11) (2010)

A novel formulation of the adjoint method in the design of quantum electronic devices, A. F. J. Levi and G. Rosen, SIAM J. Control Optim. 48, 3191-3223 (2010)

Plasmonic excitations in tight-binding nanostructures, Rodrigo A. Muniz, Stephan Haas, A. F. J. Levi, and Ilya Grigorenko, Phys. Rev. B 80, 045413 (1-6) (2009)

Quantum fluctuations in small lasers, Kaushik Roy-Choudhury, Stephan Haas, and A. F. J. Levi, Phys. Rev. Lett. 102, 053902 (1-4) (2009)

Electro-optic bistability in a LiNbO3 microdisk resonator, Mani Hossein-Zadeh, and A. F. J. Levi, IET Optoelectronics 2, 111-114 (2008)

Optimal control of electromagnetic field using metallic nanoclusters, Ilya Grigorenko, Stephan Haas, Alexander Balatsky and A F J Levi, New J. Phys. 10, 043017 (2008)

Self-homodyne photonic microwave receiver architecture based on linear optical modulation and filtering, Mani Hossein-Zadeh and A. F. J. Levi, Microwave and Optical Technol. Lett. 50, 345-350 (2008)

Towards quantum engineering, A. F. J. Levi, Proceedings of the IEEE 96, 335-342 (2008)

Design of resonators using materials with negative refractive index, Petra Schmidt, Ilya Grigorenko, and A. F. J. Levi, J. Opt. Soc. Am. B 24, 2791 (2007)

Optimization of aperiodic dielectric structures, Philip Seliger, Mohammad Mahvash, Chunming Wang, and A. F. J. Levi, J. Appl. Phys. 100, 034310-(1-6) (2006)

Electromagnetic response of broken-symmetry nano-scale clusters, Ilya Grigorenko, Stephan Haas, and A.F.J. Levi, Phys. Rev. Lett. 97, 036806 (1-4) (2006)

14.6 GHz LiNbO3 microdisk photonic self-homodyne RF receiver, Mani Hossein-Zadeh and A.F.J. Levi, IEEE MTT 54, 821-831 (2006)

Synthesis of electron transmission in nanoscale semiconductor devices, Petra Schmidt, Stephan Haas, and A.F.J. Levi, Applied Physics Letters 88, 044508 (1-3) (2006)

Synthesis for device design, Jason Thalken, Stephan Haas, and A.F.J. Levi, Journal of Applied Physics 98, 044508 (1-8) (2005)

Self-homodyne RF-optical LiNbO3 microdisk receiver, M. Hossein-Zadeh and A. F. J. Levi, Solid State Electron. 49, 1428-1434 (2005).

MAUI: Enabling Fiber-to-the-Process With Parallel Multiwavelength Optical Interconnects , Brian E. Lemoff, Mohammed E. Ali, George Panotopoulos, Graham M. Flower, B. Madhavan, A.F.J. Levi and David W. Dolfi,  Journal of Lightwave Technology 22, 2043-2054 (2004)

Adaptive design of excitonic absorption in broken-symmetry quantum wells, Jason Thalken, Weifei Li, Stephan Haas, and A.F.J. Levi,  Applied Physics Letters 85, 121-123 (2004)

Adaptive quantum design of atomic clusters, Jason Thalken, Yu Chen, A.F.J. Levi, and Stephan Haas, Physical Review B 69, 195410 (2004)

Aperiodic nanophotonic design, Ioan L. Gheorma, Stephan Haas, and A.F.J. Levi, Journal of Applied Physics 95, 1420-1426 (2004)

Adaptive design of nanoscale dielectric structures for photonics, Yu Chen, Ron Yu, Weifei Li, Omid Nohadani, Stephan Haas, and A.F.J. Levi, Journal of Applied Physics 94, 6065-6069 (2003)

Accessing transmission-mode dispersion in super-prisms, Y.Du and A.F.J. Levi, Solid-State Electronics 47, 1369-1377 (2003)

Polarization-dependent reflectivity from dielectric nanowires, Y. Du, Song Han, Wu Jin, C. Zhou, and A.F.J. Levi, Applied Physics Letters 83, 996-998 (2003)

Mb/s data transmission over a RF fiber-optic link using a LiNbO3 microdisk modulator, M. Hossein-Zadeh and A. F. J. Levi, Solid State Electron. 46, 2173-2178 (2002).

Dynamic behavior of scaled microdisk lasers, S.M.K. Thiyagarajan and A.F.J. Levi, Solid-State Electronics 45, 1821-1826 (2001)

High-speed response of optically-pumped InGaAs/InGaAsP microdisk lasers, S.M.K. Thiyagarajan and A.F.J. Levi, Electronics Letters 37, 175-176 (2001)

High-Q microphotonic electro-optic modulator,D.A.Cohen, M. Hossein-zadeh, and A.F.J. Levi, Solid-State Electronics 45, 1577-1589 (2001)

Microphotonic modulator for microwave receiver, D.A.Cohen, M. Hossein-zadeh, and A.F.J. Levi, Electronics Letters 37, 300-302 (2001)

Microphotonic millimeter-wave receiver architecture, D.A.Cohen and A.F.J. Levi, Electronics Letters 37, 37-39 (2001)

Microphotonic components for a mm-wave receiver, D.A.Cohen and A.F.J. Levi, Solid-State Electronics 45, 495-505 (2001)

Analysis of hybrid opto-electronic WDM ADC", P. Rabiei and A. F. J. Levi, IEEE J. Lightwave Technol. 18, 1264-1270 (2000)

Optical Interconnects in Systems, A.F.J. Levi, Proceedings of IEEE 88, 750-757 (2000)

Continuous room-temperature operation of microdisk laser diodes, S. M. K. Thiyagarajan, D. A. Cohen, A. F. J. Levi, S. Ryu , R. Li, and P. D. Dapkus, Electronics Letters 35, 1252-1254 (1999).

A Gbyte/s Parallel Fiber-Optic Network Interface for Multimedia Applications, B. Raghavan, Y.-G. Kim, T.-Y. Chuang, B. Madhavan, and A. F. J. Levi, IEEE Network 13, 20-28 (1999).

Noise in voltage-biased scaled semiconductor laser diodes, S. M. K. Thiyagarajan and A. F. J. Levi, Solid State Electron. 43, 33-39 (1999).

Continuous room-temperature operation of optically pumped InGaAs/InGaAsP microdisk lasers, S. M. K. Thiyagarajan, A. F. J. Levi, C. K. Lin, I. Kim, P. D. Dapkus, and S. J. Pearton, Electronics Lett. 34, 2333-2334 (1998).

A 55.0 Gb/s/cm data bandwidth density interface in 0.5 um CMOS for advanced parallel optical interconnects, B. Madhavan and A. F. J. Levi, Electron. Lett. 34, 1846-1847 (1998).

A multi-state external cavity laser diode, A. P. Kanjamala and A. F. J. Levi, Appl. Phys. Lett. 72, 2214-2216 (1998).

Signal quality in digitally modulated scaled laser diodes, S. M. K. Thiyagarajan and A. F. J. Levi, Solid State Electron. 42, 2027-2030 (1998).

Phased-array optically controlled receiver using serial feed, B. Tsap, Y. Chang, H. Fetterman, A. F. J. Levi, D. A. Cohen, I. Newberg, IEEE Photonics Technol. Lett. 10, 267-269 (1998).

Low-power 2.5 Gbps VCSEL driver in 0.5 um CMOS technology, B. Madhavan and A. F. J. Levi, Electron. Lett. 34, 178-179 (1998).

Wavelength selective electro-optic flip-flop, A. P. Kanjamala and A. F. J. Levi, Electron. Lett. 34, 299-300 (1998).

Wavelength switching in multi-cavity laser diodes, S. M. K. Thiyagarajan, A. P. Kanjamala, and A. F. J. Levi, J. Appl. Phys. 84, 1805-1812 (1998).

Wavelength selection for Gb/s data transmission using out-of-band RF modulation, A. P. Kanjamala and A. F. J. Levi, IEEE Photonics Technol. Lett. 9, 1265-1267 (1997).

Wavelength switching in multi-cavity lasers, A. P. Kanjamala and A. F. J. Levi, Appl. Phys. Lett. 71, 300-302 (1997).

Improving end system performance for multimedia applications over high bandwidth networks, S. Zeadally, G. Gheorghiu, and A. F. J. Levi, Multimedia Tools and Applications 5, 307-322 (1997).

Optically-controlled serially-fed phased array transmitter, Y. Chang, B. Tsap, H. Fetterman, D. A. Cohen, A. F. J. Levi, and I. Newberg, IEEE Microwave and Guided Wave Lett. 7, 69-71 (1997).

8 Gbps CMOS interface for parallel fiber-optic links, B. Sano, B. Madhavan, and A. F. J. Levi, Electron. Lett. 32, 2262-2263 (1996).

Wavelength switching using multicavity semiconductor laser diodes, A. P. Kanjamala and A. F. J. Levi, Electron. Lett. 32, 2100-2102 (1996).

The effect of scaling microlasers on modal noise, S. M. K. Thiyagarajan and A. F. J. Levi, Appl. Phys. Lett. 69, 3459-3461 (1996).

Transient response of wavelength switching in multi-cavity mode-locked laser diodes, A. P. Kanjamala and A. F. J. Levi, Appl. Phys. Lett. 69, 3647-3649 (1996).

Optically-controlled serially-fed phased array sensor, D. Cohen, Y. Chang, A. F. J. Levi, H. Fetterman, and I. Newberg, IEEE Photonics Technol. Lett. 8, 1683-1685 (1996).

12x622 Mb/s optical receiver Array module for parallel digital datalinks, S. Siala, Y. Dekovic, M. Govindarajan, V. Ramakishnan, R. Kinter, J. Padilla, R. N. Nottenburg, and A. F. J. Levi, IEEE-Transactions Components, Packaging, and Manufacturing Technology. Part B: Advanced Packaging 19, 548-553 (1996).

The spectrum of microdisk lasers, N. C. Frateschi and A. F. J. Levi, J. Appl. Phys. 80, 644-653 (1996).

Sub-picosecond skew in multimode fiber ribbon for synchronous data transmission, A. P. Kanjamala and A. F. J. Levi, Electron Lett. 31, 1376-1377 (1995).

Resonant modes and laser spectrum of microdisk lasers, N. C. Frateschi and A. F. J. Levi, Appl. Phys. Lett. 66, 2932-2934 (1995).

Transferred-electron induced current instabilities in heterojunction bipolar transistors, V. A. Posse, B. Jalali, and A. F. J. Levi, Appl. Phys. Lett. 66, 3319-3321 (1995).

Polarization of lasing emission in microdisk laser diodes, N. C. Frateschi, A. P. Kanjamala, A. F. J. Levi, and T. Tanbun-Ek, Appl. Phys. Lett. 66, 1859-1861 (1995).

Low skew multimode ribbon fibers for parallel optical communication, S. Siala, A. P. Kanjamala, R. N. Nottenburg, and A. F. J. Levi, Electron. Lett. 30, 1784-1786 (1994).

InGaAs/GaAs quantum well lasers with dry-etched mirrors passivated by vacuum atomic layer epitaxy, N. C. Frateschi, M. Y. Jow, P. D. Dapkus, and A. F. J. Levi, Appl. Phys. Lett. 65, 1748-1750 (1994).

A system design perspective on optical interconnection technology, R. A. Nordin and A. F. J. Levi, AT&T Technical Journal 72, (number 5) 37-49 (1993).

Semiconductor microlasers, A. F. J. Levi, Physics World 6, no. 10, 32-35 (1993).

Si-based receivers for optical data links, B. Jalali, L. Naval, and A. F. J. Levi, J. Lightwave Technol. 12, 930-935 (1994).

Microdisk lasers, A. F. J. Levi, Solid State Electronics 37, 1297-1302 (1994).

Comparison of graded and abrupt junction InGaAs heterojunction bipolar transistors, J. A. Baquedano, A. F. J. Levi, and B. Jalali, Appl. Phys. Lett. 64, 67-69 (1994).

Threshold characteristics of semiconductor microdisk lasers, R. E. Slusher, A. F. J. Levi, U. Mohideen, S. L. McCall, S J. Pearton, and R. A. Logan, Appl. Phys. Lett. 63, 1310-1312 (1993).

Room temperature operation of submicrometre radius disc laser, A. F. J. Levi, S. L. McCall, S. J. Pearton, and R. A. Logan, Electron. Lett. 29, 1666-1667 (1993).

High performance optical data link array technology, R. A. Nordin, D. B. Buchholz, R. F. Huisman, N. R. Basavanhally, and A. F. J. Levi, IEEE-Transactions Components, Packaging, and Manufacturing Technology 16, 783-788 (1993).

Forward delay in scaled AlInAs/InGaAs heterojunction bipolar transistors, J. A. Baquedano, A. F. J. Levi, B. Jalali, and A. Y. Cho, Appl. Phys. Lett. 63, 2261-2263 (1993).

Direct observation of electron spectral function in the integer and fractional quantum hall regimes, G. S. Boebinger, A. F. J. Levi, A. Passner, L. N. Pfeiffer, and K. W. West, Phys. Rev. B 47, 16608-16611 (1993).

Amplified spontaneous emission and carrier pinning in laser diodes, S. L. Chuang, J. O'Gorman, and A. F. J. Levi, IEEE J. Quantum Electron. 29, 1631-1639 (1993).

Room temperature lasing action in InGaP/InGaAs microcylinder laser diodes, A. F. J. Levi, R. E. Slusher, S. L. McCall, S. J. Pearton, and W. S. Hobson, Appl. Phys. Lett. 62, 2021-2023 (1993).

Effect of fixed emission wavelength on threshold current of InGaAsP semiconductor laser diodes, J. O'Gorman and A. F. J. Levi, Electron. Lett. 28, 2091-2093 (1992).

Carrier pinning by mode fluctuations in laser diodes, J. O'Gorman, S. L. Chuang, and A. F. J. Levi, Appl. Phys. Lett. 62, 1454-1456 (1993).

Wavelength dependence of To in InGaAsP semiconductor laser diodes, J. O'Gorman and A. F. J. Levi, Appl. Phys. Lett. 62, 2009-2011 (1993).

Forward transit delay in InGaAs heterojunction bipolar transistors with nonequilibrium electron transport, J. Laskar, R. N. Nottenburg, J. A. Baquedano, A. F. J. Levi, and J. Kolodzey, IEEE Trans. Elect. Device. 40, 1942-1949 (1993).

Directional light coupling from microdisk lasers, A. F. J. Levi, R. E. Slusher, S. L. McCall, J. L. Glass, S. J. Pearton, and R. A. Logan, Appl. Phys. Lett. 62, 561-563 (1993).

Cavity formation in semiconductor lasers, J. O'Gorman, A. F. J. Levi, D. Coblentz, T. Tanbun-Ek, and R. A. Logan, Appl. Phys. Lett. 61, 889-891 (1992).

Room temperature operation of microdisc lasers with submilliamp threshold current, A. F. J. Levi, R. E. Slusher, S. L. McCall, T. Tanbun-Ek, D. L. Coblentz and S. J. Pearton, Electron. Lett. 28, 1010-1012 (1992).

High-speed coplanar transmission lines, U. D. Keil, D. R. Dykaar, A. F. J. Levi, R. F. Kopf, L. N. Pfeiffer, S. B. Darack, and K. W. West, IEEE J. Quantum Electronics 28, 2333-2342 (1992).

SiGe photo-detectors grown by rapid thermal chemical vapor deposition, B. Jalali, A. F. J. Levi, F. Ross, and E. A. Fitzgerald, Electron. Lett. 28, 269-271 (1992).

The temperature dependence of long wavelength semiconductor lasers, J. O'Gorman, A. F. J. Levi, T. Tanbun-Ek, and R. A. Logan, Appl. Phys. Lett. 60, 1058-1060 (1992).

Vertical scaling in heterostructure bipolar transistors with nonequilibrium electron transport, A. F. J. Levi, B. Jalali, R. N. Nottenburg, and A. Y. Cho, Appl. Phys. Lett. 60, 460-462 (1992).

Whispering mode microdisk lasers, S. L. McCall, A. F. J. Levi, R. E. Slusher, S. J. Pearton, and R. A. Logan, Appl. Phys. Lett. 60, 289-291 (1992).

On the temperature sensitivity of semiconductor lasers, J. O'Gorman, A. F. J. Levi, S. Schmitt-Rink, T. Tanbun-Ek, D. L. Coblentz, and R. A. Logan, Appl. Phys. Lett. 60, 157-159 (1992).

Optical rectification at semiconductor surfaces, S. L. Chuang, S. Schmitt-Rink, B. I. Greene, P. N. Saeta, and A. F. J. Levi, Phys. Rev. Lett. 68, 102-105 (1992).

Digital transmission with intracavity loss modulated quantum well distributed feedback lasers, P. A. Andrekson, J. O'Gorman, A. F. J. Levi, M. Haner, N. A. Olsson, T. Tanbun-Ek, D. L. Coblentz, and R. A. Logan, IEEE Trans. Photonics Technol. Lett. 3, 1150-1152 (1991).

Excitation mechanisms and optical properties of rare-earth ions in semiconductors, S. Schmitt-Rink, C. M. Varma, and A. F. J. Levi, Phys. Rev. Lett. 66, 2782-2785 (1991).

Dynamic spectral broadening in digitally modulated lasers, J. O'Gorman, A. F. J. Levi, T. Tanbun-Ek, D. L. Coblentz, and R. A. Logan, Electron. Lett. 27, 1239-1241 (1991).

Saturable absorption in intracavity loss modulated quantum well lasers, J. O'Gorman, A. F. J. Levi, T. Tanbun-Ek, and R. A. Logan, Appl. Phys. Lett. 59, 16-18 (1991).

Nonlinear spectroscopy near-half gap in bulk and quantum well GaAs/AlGaAs waveguides, M. N. Islam, C. E. Soccolich, R. E. Slusher, A. F. J. Levi, W. S. Hobson, and G. Young, J. Appl. Phys. 71, 1927-1935 (1992).

Large nonlinear phase shifts in low-loss AlGaAs waveguides near half gap, S. T. Ho, C. E. Soccolich, W. S. Hobson, A. F. J. Levi, M. N. Islam, and R. E. Slusher, Appl. Phys. Lett. 59, 2558-2560 (1991).

All-optical timing restoration using a hybrid time domain chirp switch, M. N. Islam, C. E. Soccolich, S. T. Ho, R. E. Slusher, W. S. Hobson, and A. F. J. Levi, Optics Lett. 16, 1116-1118 (1991).

Log-periodic antennas for pulsed terahertz radiation, D. R. Dykaar, B. I. Greene, J. F. Federici, A. F. J. Levi, L. Pfeiffer and R. Kopf, Appl. Phys. Lett. 59, 262-264 (1991).

Schottky barrier inhomogeneity at epitaxial NiSi2 interfaces on Si(100), R. T. Tung, A. F. J. Levi, J. P. Sullivan, and F. Schrey, Phys. Rev. Lett. 66, 72-75 (1991).

Ordered monolayer structures of boron in Si(111) and Si(100), R. L. Headrick, B. E. Weir, A. F. J. Levi, B. Freer, J. Bevk, and L. C. Feldman, J. Vac. Sci. Technol. A9, 2269-2272 (1991).

Buried, ordered structures: Boron in Si(111) and Si(100), R. L. Headrick, B. E. Weir, A. F. J. Levi, D. J. Eaglesham, and L. C. Feldman, J. Crystal Growth 111, 838-842 (1991).

High power switching of multielectrode broad area lasers, J. O'Gorman, A. F. J. Levi, and W. S. Hobson, Electron. Lett. 27, 13-15 (1991).

Low threshold GaAs/AlGaAs quantum well lasers grown by organometallic vapor phase epitaxy using trimethylamine alane, W. S. Hobson, J. P. van der Zeil, A. F. J. Levi, J. O'Gorman, C. R. Abernathy, M. Geva, L. C. Luther, and V. Swaminathan, J. Appl. Phys. 70, 432-435 (1991).

GRINSCH GaAs/AlGaAs laser structures grown by OMVPE using a novel aluminum source, W. S. Hobson, A. F. J. Levi, J. O'Gorman, S. J. Pearton, C. R. Abernathy, and V. Swaminathan, Electron. Lett. 26, 1762-1764 (1990).

Calculated chirp in intracavity loss modulated DFB lasers, J. O'Gorman and A. F. J. Levi, Electron. Lett. 26, 1784-1787 (1990).

Asymmetric line broadening in intracavity loss modulated quantum well distributed feedback lasers, J. O'Gorman, A. F. J. Levi, T. Tanbun-Ek, and R. A. Logan, Appl. Phys. Lett. 58, 669-671 (1991).

A systems perspective on digital interconnection technology, R. A. Nordin, A. F. J. Levi, R. N. Nottenburg, J. O'Gorman, T. Tanbun-Ek, and R. A. Logan, J. Lightwave Technol. 10, 811-827 (1992).

High index contrast mirrors for optical microcavities, Seng-Tiong Ho, S. L. McCall, R. E. Slusher, L. N. Pfeiffer, K. W. West, A. F. J. Levi, G. E. Blonder, and J. Jewell, Appl. Phys. Lett. 57, 1387-1389 (1990).

Dynamic and static response of multielectrode lasers, J. O'Gorman, A. F. J. Levi, R. N. Nottenburg, T. Tanbun-Ek, and R. A. Logan, Appl. Phys. Lett. 57, 968-970 (1990).

Dynamic optoelectronic read/write memory, R. N. Nottenburg, A. F. J. Levi, T. Tanbun-Ek, and R. A. Logan, Appl. Phys. Lett. 56, 1501-1503 (1990).

Direct observation of two-dimensional magnetopolarons in a resonant tunnel junction, G. S. Boebinger, A. F. J. Levi, S. Schmitt-Rink, A. Passner, L. N. Pfeiffer, and K. W. West, Phys. Rev. Lett. 65, 235-238 (1990).

The Si(100)-(2X1) boron reconstruction: Self-limiting monolayer doping, R. L. Headrick, B. E. Weir, A. F. J. Levi, D. J. Eaglesham, and L. C. Feldman, Appl. Phys. Lett. 57, 2779-2781 (1990).

Electrical conduction in the Si(111):B-R30/a-Si interface reconstruction, R. L. Headrick, A. F. J. Levi, H. S. Luftman, J. Kovalchick, and L. C. Feldman, Phys. Rev. B 43, 14711-14714 (1991).

Ultrafast coplanar air-transmission lines, D. R. Dykaar, A. F. J. Levi, and M. Anzlowar, Appl. Phys. Lett. 57, 1123-1125 (1990).

Picosecond pump and probe spectroscopy utilizing freely propagating terahertz radiation, B. I. Greene, J. F. Federici, D. R. Dykaar, A. F. Levi, and L. Pfeiffer, Optics Lett. 16, 48-49 (1991).

Large signal picosecond response of InGaAs/InP quantum well lasers with an intracavity loss modulator, D. R. Dykaar, K. Berthold, A. F. J. Levi, T. Tanbun-Ek, and R. A. Logan, Appl. Phys. Lett. 56, 1629-1631 (1990).

Base doping limits in heterostructure bipolar transistors, B. Jalali, R. N. Nottenburg, A. F. J. Levi, R. A. Hamm, M. B. Panish, D. Sivco, and A. Y. Cho, Appl. Phys. Lett. 56, 1460-1462 (1990).

Nonequilibrium electron transport in heterostructure bipolar transistors probed by magnetic field, R. N. Nottenburg, A. F. J. Levi, B. Jalali, D. Sivco, D. A. Humphrey, and A. Y. Cho, Appl. Phys. Lett. 56, 2660-2662 (1990).

Multielectrode quantum well laser for digital switching, A. F. J. Levi, R. N. Nottenburg, R. A. Nordin, T. Tanbun-Ek, and R. A. Logan, Appl. Phys. Lett. 56, 1095-1097 (1990).

Nonequilibrium electron transport in bipolar devices, A. F. J. Levi, R. N. Nottenburg, Y. K. Chen, and M. B. Panish, Physics Today, 43, 58-64 (1990).

Wavelength switching in InGaAs/InP quantum well lasers, K. Berthold, A. F. J. Levi, T. Tanbun-Ek, and R. A. Logan, Appl. Phys. Lett. 56, 122-124 (1990).

Very low threshold InGaAs/InGaAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxy, T. Tanbun-Ek, R. A. Logan, H. Temkin, K. Berthold, A. F. J. Levi, and S. N. G. Chu, Appl. Phys. Lett. 55, 2283-2285 (1989).

Voltage controlled Q-switching of InGaAs/InP single quantum well lasers, K. Berthold, A. F. J. Levi, T. Tanbun-Ek, R. A. Logan, and G. Chu, Appl. Phys. Lett. 55, 1940-1942 (1989).

Bias controlled intersubband wavelength switching in a GaAs/AlGaAs quantum well laser, K. Berthold, A. F. J. Levi, S. J. Pearton, R. J. Malik, W. Y. Jan, and J. E. Cunningham, Appl. Phys. Lett. 55, 1382-1384 (1989).

Nonequilibrium Electron Dynamics in Bipolar Transistors, A. F. J. Levi, R. N. Nottenburg, Y. K. Chen, P. H. Beton, and M. B. Panish, Solid State Electronics 32, 1289-1295 (1989).

Submicrometer AlGaAs/GaAs heterostructure bipolar transistor with high gain, M. Anzlowar, D. A. Humphrey, D. Sivco, A. Y. Cho, R. N. Nottenburg, and A. F. J. Levi, Electron. Lett. 25, 1529-1530 (1989).

High frequency study of nonequilibrium transport in heterostructure bipolar transistors, Y. K. Chen, A. F. J. Levi, R. N. Nottenberg, P. H. Beton, M. B. Panish, Appl. Phys. Lett. 55, 1789-1791 (1989).

Temperature and Field Dependence of the Magnetic Penetration Length of C-Axis Oriented YBaCuO Films, P. L. Gammel, A. F. Hebard, C. E. Rice, and A. F. J. Levi, Physica C 162-164, 1565-1566 (1989).

Ion beam thinning and polishing of YBaCuO films, A. F. Hebard, R. M. Fleming, K. L. Short, A. E. White, C. E. Rice, A. F. J. Levi, and R. H. Eick, Appl. Phys. Lett. 55, 1915-1917 (1989).

Electron transport in an AlSb/InAs/GaSb tunnel emitter hot electron transistor, T. H. Chiu and A. F. J. Levi, Appl. Phys. Lett. 55, 1891-1893 (1989).

Near-ideal Lateral Scaling in Abrupt AlInAs/InGaAs Heterostructure Bipolar Transistors Prepared by Molecular Beam Epitaxy, B. Jalali, R. N. Nottenburg, Y. K. Chen, A. F. J. Levi, A. Y. Cho, and D. Sivco, Appl. Phys. Lett. 54, 2333-2335 (1989).

Numerical Study of Nonequilibrium Electron Transport in AlGaAs/GaAs Heterojunction Bipolar Transistors, P. H. Beton and A. F. J. Levi, Appl. Phys. Lett. 55, 250-252 (1989).

AlAs/GaAs Tunnel Emitter Bipolar Transistor, A. F. J. Levi, R. N. Nottenburg, Y. K. Chen, and J. E. Cunningham, Appl. Phys. Lett. 54, 2250-2252 (1989).

A Pairbreaking Description of the Superconducting-Normal Phase Boundary in YBaCuO Thin Films; The Type II-Clean Limit, A. F. Hebard, P. L. Gammel, C. E. Rice, and A. F. J. Levi, Phys. Rev. B40, 5243-5246 (1989).

Tunneling in the Presence of Phonons: A Solvable Model, B. Y. Gelfand, S. Schmitt-Rink, and A. F. J. Levi, Phys. Rev. Lett. 62, 1683-1686 (1989).

High Field Transport in GaAs Transistors, K. Berthold, A. F. J. Levi, J. Walker, and R. J. Malik, Appl. Phys. Lett. 54, 813-819 (1989).

Non-Random Doping and Elastic Scattering of Carriers in Semiconductors, A. F. J. Levi, S. L. McCall, and P. M. Platzman, Appl. Phys. Lett. 54, 940-942 (1989).

Scaling "Ballistic" Heterojunction Bipolar Transistors, A. F. J. Levi, Electron. Lett. 24, 1273-1275 (1988).

Quantum Reflections and Inelastic Scattering of Electrons in Semiconductor Heterojunctions, J. F. Müller, A. F. J. Levi, and S. Schmitt-Rink, Phys. Rev. B 38, 9843-9849 (1988).

Extreme Nonequilibrium Electron Transport in Heterojunction Bipolar Transistors, K. Berthold, A. F. J. Levi, J. Walker, and R. J. Malik, Appl. Phys. Lett. 52, 2247-2249 (1988).

GaInAs/GaInAsP/InP Heterostructure Bipolar Transistors with Very Thin Base (150Å) Grown by Chemical Beam Epitaxy, W. T. Tsang, A. F. J. Levi, and E. G. Burkhardt, Appl. Phys. Lett. 53, 983-985 (1988).

Ion-Beam-Induced Metal-Insulator Transition in YBaCuO: A Mobility Edge?, J. M. Valles, Jr., A. E. White, K. T. Short, R. C. Dynes, J. P. Garno, A. F. J. Levi, M. Anzlowar, and K. Baldwin. Phys. Rev. B 39, 11599-11602 (1989).

Electrical Response of Superconducting YBaCuO to Light, W. S. Brocklesby, D. Monroe, A. F. J. Levi, M. Hong, S. H. Liou, J. Kwo, C. E. Rice, P. M. Mankiewich, and R. E. Howard, Appl. Phys. Lett. 54, 1175-1177 (1988).

Controllable Reduction of critical currents in YBaCuO films, A. E. White, K. T. Short, R. C. Dynes, A. F. J. Levi, M. Anzlowar, K. Baldwin, P. A. Polakos, T. A. Fulton, and L. N. Dunkleberger, Appl. Phys. Lett. 53, 1010-1012 (1988).

Implantation, Damage, and Regrowth of High Tc Superconductors, A. E. White, K. T. Short, J. P. Garno, R. C. Dynes, L. F. Schneemeyer, J. Waszczak, A. F. J. Levi, M. Anzlowar, and K. W. Baldwin, Nucl. Instr. Methods in Phys. Research B 37/38, 923-929 (1989).

Normal State Transport Parameters of Epitaxial Thin Films of YBaCuO , H. L. Störmer, A. F. J. Levi, K. W. Baldwin, M. Anzlowar, and G. Boebinger, Phys. Rev. B 38, 2472-2476 (1988).

Epitaxial Order and Resistivity of High Temperature Superconductors grown on SrTiO , A. F. J. Levi, J. M. Vandenberg, C. E. Rice, A. P. Ramirez, K. W. Baldwin, M. Anzlowar, A. E. White, and K. Short, J. Crystal Growth. 91, 386-391 (1988).

Preparation of Superconducting Thin Films of Calcium Strontium Bismuth Copper Oxides by Coevaporation, C. E. Rice, A. F. J. Levi, R. M. Fleming, P. Marsh, K. W. Baldwin, M. Anzlowar, A. E. White, K. T. Short, S. Nakahara, and H. L. Störmer, Appl. Phys. Lett. 52, 1828-1830 (1988).

Ion-Beam-Induced Destruction of Superconducting Phase Coherence in YBaCuO , Alice E. White, K. T. Short, D. C. Jacobson, J. M. Poate, R. C. Dynes, P. M. Mankiewich, W. J. Skocpol, R. E. Howard, M. Anzlowar, K. W. Baldwin, A. F. J. Levi, J. R. Kwo, T. Hsieh, and M. Hong, Phys. Rev. B 37, 3755-3758 (1988).

"Coreless Defects" and Continuity of Epitaxial NiSi2/Si(100) Thin Films, J. L. Batstone, J. M. Gibson, R. T. Tung, and A. F. J. Levi, Appl. Phys. Lett. 52, 828-830 (1988).

Origin of the Excess Capacitance at Intimate Schottky Contacts, J. Werner, A. F. J. Levi, R. T. Tung, M. Anzlowar, and M. R. Pinto, Phys. Rev. Lett. 60, 53-56 (1988).

Epitaxial Yttrium Silicide on (111) Silicon by Vacuum Annealing, M. Gurvitch, A. F. J. Levi, R. T. Tung, and S. Nakahara, Appl. Phys. Lett. 51, 311-313 (1987).

Electron Transport of (Al, Ga)Sb/InAs Heterojunctions Prepared by Molecular Beam Epitaxy, T. H. Chiu, W. T. Tsang, and A. F. J. Levi, Electron. Lett. 23, 917-919 (1987).

Hot Electron Transport in the AlSb/InAs/GaSb Double Heterostructure Prepared by Molecular Beam Epitaxy, T. H. Chiu, and A. F. J. Levi, J. Vac. Sci. Technol. B6, 674-675 (1988).

Electron Beam Source Molecular Beam Epitaxial Growth of Analog Graded AlGaAs Ballistic Transistors, R. J. Malik and A. F. J. Levi, Appl. Phys. Lett. 52, 651-653 (1988).

Inelastic Scattering of Electrons Traversing Semiconductor Heterojunctions, J. Müller, S. Schmitt-Rink, and A. F. J. Levi, Appl. Phys. Lett. 52, 236-238 (1987).

Unipolar Hot Electron Transistors, A. F. J. Levi and T. H. Chiu, Physica Scripta T23, 227-231 (1988).

Room Temperature Operation of Unipolar Hot Electron Transistors, A. F. J. Levi and T. H. Chiu, Solid State Electronics 31, 625-628 (1988).

Electron Transport Dynamics in Quantized Intrinsic GaAs, A. F. J. Levi, R. J. Späh, and J. H. English, Phys. Rev. B 36, 9402-9405 (1987).

Room Temperature Operation of Hot Electron Transistors, A. F. J. Levi and T. H. Chiu, Appl. Phys. Lett. 51, 984-986 (1987).

Nonequilibrium Electron Transport in Bipolar Devices, A. F. J. Levi and Y. Yafet, Appl. Phys. Lett. 51, 42-44 (1987).

Electroluminescence from the Base of a GaAs/AlGaAs Double Heterojunction Bipolar Transistor, A. F. J. Levi, J. R. Hayes, A. C. Gossard, and J. H. English, Appl. Phys. Lett. 50, 98-100 (1987).

A New Technique for the Growth of Compositionally Graded Layers by OMCVD for Novel Device Structures, R. Bhat, M. A. Koza, J. R. Hayes, and A. F. J. Levi, J. of Crystal Growth 77, 293-296 (1986).

Epitaxial Metal-Semiconductor Structures and their Properties, R. T. Tung, A. F. J. Levi, and J. M. Gibson, J. Vac. Sci. Technol. B 4, 1435-1443 (1986).

States at Epitaxial NiSi2/Si Heterostructures studied by DLTS and Hydrogenation, A. Chantre, A. F. J. Levi, R. T. Tung, W. C. Dautremont-Smith, and M. Anzlowar, Phys. Rev. B 34, 4415-4418 (1986).

Base Transport Dynamics in a Heterojunction Bipolar Transistor, J. R. Hayes, A. F. J. Levi, A. C. Gossard, and J. H. English, Appl. Phys. Lett. 49, 1481-1483 (1986).

Dynamics of Injected Electron Cooling in GaAs, J. R. Hayes, A. F. J. Levi, and W. Wiegmann, Appl. Phys. Lett. 48, 1365-1367 (1986).

Dynamics of Extreme Nonequilibrium Electron Transport, J. R. Hayes and A. F. J. Levi, IEEE J. Quantum Electron. 22, 1744-1752 (1986).

Ballistic Injection Devices, A. F. J. Levi, J. R. Hayes, and R. Bhat, Appl. Phys. Lett. 48, 1609-1611 (1986).

The Schottky Barrier Heights of single crystal NiSi2 on Si(111): The Effect of a surface P-N Junction, R. T. Tung, K. K. Ng, J. M. Gibson, and A. F. J. Levi, Phys. Rev. B 33, 7077-7090 (1986).

Growth of Strained Layer Semiconductor/Metal/Semiconductor Heterostructures, R. T. Tung, J. M. Gibson, and A. F. J. Levi, Appl. Phys. Lett. 48, 1264-1266 (1986).

Control of a Natural Permeableng CoSi2 base transistor, A. F. J. Levi, and J. M. Gibson, Appl. Phys. Lett. 48, 635-637 (1986).

Transistor Action in Si/CoSi2/Si Heterostructures, J. C. Hensel, A. F. J. Levi, R. T. Tung, and J. M. Gibson, Appl. Phys. Lett. 47, 151-153 (1985).

Magnetic Field Dependence of Hot Electron Transport in GaAs, J. R. Hayes, A. F. J. Levi, and W. Wiegmann, Appl. Phys. Lett. 47, 964-966 (1985).

Hot Electron Spectroscopy of GaAs, A. F. J. Levi, J. R. Hayes, P. M. Platzman, and W. Wiegmann, Physica 134 B, 480-486 (1985).

Hot Electron Spectroscopy of GaAs, J. R. Hayes, A. F. J. Levi, and W. Wiegmann, Phys. Rev. Lett. 54, 1570-1572 (1985).

Injected Hot Electron Transport in GaAs, A. F. J. Levi, J. R. Hayes, P. M. Platzman, and W. Wiegmann, Phys. Rev. Lett. 55, 2071-2073 (1985).

Hot Electron Spectroscopy, J. R. Hayes, A. F. J. Levi, and W. Wiegmann, Electron. Lett. 20, 851-852 (1984).

Phonon Structure of Amorphous Germanium by Inelastic Electron Tunnelling Spectroscopy, M. C. Payne, A. F. J. Levi, W. A. Phillips, J. C. Inkson, and C. J. Adkins, J. Phys. C 17, 1643-1653 (1984).

Phonon Structure of Amorphous SiOx by Inelastic Tunnelling Spectroscopy, A. F. J. Levi, W. A. Phillips, and C. J. Adkins, Solid State Comm. 45, 43-45 (1983).